| 摘要 |
PROBLEM TO BE SOLVED: To suppress leakage current between a diffusion layer and a capacitor electrode in a semiconductor storage device with high density by electrically connecting one diffusion layer of switching MOSFET with a trench-type storage electrode through a conduction path formed at an upper end edge part. SOLUTION: A part of side wall part 26 containing the upper end edge part 24 of a trench-type storage electrode 22 is electrically insulated from a diffusion layer 23. A connection electrode part 25 is constituted on the upper face 24 of a capacitor electrode 22, and the diffusion layer 23 is formed by a cell alignment system by using MOSFET 41. It is desirable that an element isolation layer 50 formed between plural semiconductor elements, memory cell parts, for example, is formed by a film constituted of LOCOS. A nitride film 40 existing in an area where the storage electrode 22 of the trench-type capacitor and the diffusion layer 23 of the transistor are connected is selectively etched, and the storage electrode 22 and the diffusion layer 23 are connected at the upper part of a trench by self-alignment. An insulating film 40 is deposited on a silicon substrate 1 as a mask material forming trench isolation. |
