| 摘要 |
<p>PROBLEM TO BE SOLVED: To selectively apply the internal voltage necessary for the writing of a memory cell to every local bit line by precharging all the local bit lines at once up to the internal voltage from a common source line via a switch means and regardless of the logical value of the write data. SOLUTION: When the internal voltage is selectively applied to the local bit lines LB0-LBn of a designated memory cell block, all the lines LB0-LBn are precharged at once from a source line SL via an N switch MOSFET N3 of every cell unit, a division source line and an N switch MOSFET N2 and regardless of the logical value of the write data. Then the precharge potential of every local bit line is selectively discharged toward the corresponding global bit lines GBU0-GBUn via an N switch MOSFET N1.</p> |
