SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor device reducing step-difference which is to be caused by a light shielding film and exerts adverse influence on formation of a TFT when the light shielding film is arranged on a substrate and covered with an interlayer insulating film, and the TFT is formed above the light shielding film, and a semiconductor device manufacturing method. SOLUTION: Impression parts 2 are formed on a glass substrate 1, and an aluminum film 3 is formed on the whole surface of the upper part of the glass substrate containing the impression parts. The aluminum is flattened by polishing, subjected to anodic oxidation as far as extending to the upper end part of the glass substrate, and changed to a transparent insulating layer 32. As a result, the upper part of the glass substrate is flattened, and generation of step-difference on a light shielding film 35 is excluded.