| 摘要 |
PROBLEM TO BE SOLVED: To give an accurate exposure amount to each point in a shot region on a substrate by a method wherein illumination beams are pulse-emitted at each of such distance intervals that a width in a scanning direction is just divided by a predetermined integer value, and the substrate is controlled in an exposure amount in response to an intensity unevenness of the illumination beams in the direction perpendicular to the scan direction. SOLUTION: In the case of a pulse beams source, as peak intensity values vary in each pulse, the pulse beams are emitted in each of such distance intervals that a width XPs+ΔXs in a scanning direction in a slit-like illumination region IA provided at half intensity Im/2 when the average value is Im is just divided by a predetermined integer value Np. The integer value Np is namely a pulse number overlapped at arbitrary 1 point on a wafer W. For this reason, in order to attain a desirable exposure system on the wafer by standardizing variations of peak intensity values in each pulse, a lowest value of the integer values Np is naturally determined in response to the variations of the intensity of each pulse. |
