| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device including a step for forming a low resistance metallic film on a base film with a barrier metal film in between, by which the recess of a conductive film can be prevented from occurring in a wiring groove or a connection hole during polishing of the barrier metal on an insulation film. SOLUTION: This manufacturing method includes a step to form an insulation film 8 above a semiconductor substrate 8; a step to form a groove or a hole in the insulation film 8; a step to form a barrier metal film 11 containing a first element inside the groove or hole and on the insulation film 8; a step to form a main conductive film 12 made of metal on the barrier metal film 11; and a step to remove the main conductive film 12 on the insulation film 8 by polishing it so as to expose the barrier metal film 11, and to polish the barrier metal film 11 and the main conductive film 12 by using a chemical liquid containing organic complex ions, which produces an organic complex body through a reaction with the first element so as to remove them from the upper surface of the insulation film 8.
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