| 摘要 |
The method involves manufacturing an image detector including a pixel matrix from a semiconductor material, especially amorphous silicon, which consists of several side by side arranged panels, and which is covered by a passive layer. A scintillation layer is provided for converting an incidenting radiation into a radiation detectable by the pixel matrix. A layer transparent for the radiation emitted by the scintillation layer, is brought up on the passive layer, whereupon the scintillation layer is formed on the layer by evaporation. A foil is preferably used as the layer, which is affixed or is glued on the passive layer.
|
