| 摘要 |
<p>A high-quality SOI wafer having a roughness of the surface of an SOI layer of the SOI wafer is 0.12 nm or less in terms of RMS value and/or a roughness of the interface between the SOI layer and a burried oxide film is 0.12 nm or less in terms of RMS value. A method for producing such an SOI wafer in which an SOI wafer is mirror-polished, the natural oxide film on the SOI wafer is removed or a thermal oxide film having a thickness of 300 nm or more is formed on the surface and then the thermal oxide film is removed, and the wafer is subjected to a heat-treatment in 100% hydrogen gas, or in a mixture gas atmosphere of argon and/or nitrogen containing 10% or more of hydrogen by means of a rapid-heating/rapid-cooling device. Excellent roughnesses of the surface of the SOI layer and the SOI/BOX interface are realized hardly influencing the variations of the device characteristics such as the oxide film breakdown voltage, and the threshold voltage, the carrier mobility of a MOS device produced using such an SOI wafer.</p> |
