| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent short-circuited defects in adjacent bumps and enable formation of a bump at a narrow pitch by preventing the top plane outline of the bump from spreading, when the bump grows form. SOLUTION: By forming a metal film 50 of a thickness of 2-3μm on a side face of a bump 60, the bump 60 is prevented from spreading in the outer circumferential direction, when growing to form and the top plane outline is prevented from spreading to grow and form in the outer circumferential direction. This method is also effective as a method of forming bumps, and with this method, the bump is protected from short-circuiting defects with adjacent bumps, and a semiconductor element having bumps with further narrowly pitched can be provided.</p> |
