| 摘要 |
PROBLEM TO BE SOLVED: To reduce crosstalk by making the impurity concentration of a first conductivity type high concentration barrier area formed below a boundary area dividing elements to be higher than the impurity concentration of an area positioned in the same substrate depth as the high concentration barrier area. SOLUTION: A P-type epitaxial growth layer 10a with low concentration is formed on a silicon substrate 400. Film thickness is set to be a distance from the lower face of a picture element part to the forming position of a barrier high concentration P-type area 11. The prescribed amount of a P-type impurity is selectively implanted only in a position below a boundary area dividing picture elements in a horizontal direction. A P-type epitaxial growth layer 10b is formed on the P-type epitaxial growth layer 10a having same concentration and the thickness of the P-type epitaxial growth layer 10 formed of the two layers is made to be equal to that of a P-type epitaxial growth layer 401. N-type diffusion areas 101-104, a separation P-type diffusion area 105, a gate oxide film 402 and a polysilicon electrode are formed on an upper side and a silicon substrate 404 below the picture element part is cut.
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