发明名称 Mask structure and method of manufacturing the same
摘要 A mask manufacturing method includes performing a multiple exposure process to a substrate so that a number of latent images are formed on the substrate, and processing the exposed substrate to produce actual mask patterns, wherein the multiple exposure process includes a first exposure step for forming a latent image of relatively-fine periodic patterns on the substrate by use of a first master mask having absorptive periodic patterns, and a second exposure step for forming a latent image of relatively-rough patterns on the substrate by use of a second master mask having absorptive patterns. <IMAGE>
申请公布号 EP1045288(A2) 申请公布日期 2000.10.18
申请号 EP20000302991 申请日期 2000.04.10
申请人 CANON KABUSHIKI KAISHA 发明人 AMEMIYA, MITSUAKI;UZAWA, SHUNICHI;CHIBA, KEIKO
分类号 H01L21/027;G03F1/22;G03F1/24;G03F7/20 主分类号 H01L21/027
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