| 摘要 |
<p>The present invention provides a magnetoresistance device having a relatively high magnetoresistance ratio, also enabling scale-down and low-current driving, and may cause less deterioration of recording storage performance. It is a magnetoresistance device comprising a substrate and a multi-layer film having a first magnetic layer, a second magnetic layer, a non-magnetic layer, a third magnetic layer and a fourth magnetic layer which are superposed on the substrate in this order, and the first magnetic layer stands exchange-coupled with the second magnetic layer, and the third magnetic layer with the fourth magnetic layer, and both the first magnetic layer and the fourth magnetic layer have a magnetic anisotropy in the film-plane normal direction. <IMAGE></p> |
