| 摘要 |
The electron beam photolithography device uses a block mask (21), inserted in the path of the electron beam, provided with a number of square or rectangular aperture patterns, arranged in a matrix, together with at least one setting aperture pattern, used for setting the main beam deflector (31) to provide a given electron beam intensity at each edge of the setting aperture pattern. Also included are Independent claims for the following; (a) a setting method for a photolithography device; (b) a block mask for use in a photolithography device |
