Method for realizing integrated electronic devices on semiconductor substrates having gettering centres

摘要

This invention relates to a method for manufacturing electronic devices integrated monolithically in a semiconductor substrate delimited by two opposed front (3) and back (4) surfaces of a semiconductor material wafer (2). The method comprises at least a step of implanting ions of a noble gas, followed by a thermal treatment directed to form gettering microvoids in the semiconductor by evaporation of the gas. The ion implanting step is carried out through the back surface (4) of the semiconductor wafer (2) prior to starting the manufacturing process for the electronic devices, essentially before the step of cleaning the front surface (3) of the wafer (2).