| 摘要 |
A single-wafer, chemical vapor deposition reactor (10) is provided with hydrogen and silicon source gases (72, 74, 86) suitable for epitaxial silicon deposition, as well as a safe mixture (70) of oxygen in a non-reactive gas. Methods are provided for forming oxide and silicon layers within the same chamber (12). In particular, a sacrificial oxidation (102) is performed, followed by a hydrogen bake (104) to sublime the oxide and leave a clean substrate. Epitaxial deposition (106) can follow in situ. A protective oxide can also be formed (108) over the epitaxial layer within the same chamber, preventing contamination of the critical epitaxial layer. Alternatively, the oxide layer (124) can serve as the gate dielectric, and a polysilicon gate layer (126) can be formed (112) in situ over the oxide (124). |
