Method for manufacturing DRAM cell capacitor,申请号GB20000004163-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称	Method for manufacturing DRAM cell capacitor
摘要
申请公布号	GB2349015(A)	申请公布日期	2000.10.18
申请号	GB20000004163	申请日期	2000.02.22
申请人	* SAMSUNG ELECTRONICS CO., LTD.	发明人	YOO SANG * HWANG;SANG-HO * SONG;BYUNG-JUN * PARK;TAE YOUNG * CHUNG
分类号	H01L21/02;H01L21/768;H01L21/8242;H01L27/108;(IPC1-7):H01L21/02;H01L21/824	主分类号	H01L21/02
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Optimum gap determined recording/reproducing apparatus

Write strategy determining method, optical disc recording method, optical disc and optical disc apparatus

Method and apparatus for controlling data access rate of an optical disc driver

Delay adjustment device, semiconductor device and delay adjustment method

Method for programming multi-level cell and memory apparatus

Refresh circuitry for phase change memory

SRAM having wordline up-level voltage adjustable to assist bitcell stability and design structure for same

Ternary Content Addressable Magnetoresistive random access memory cell

Power converting apparatus including half-bridge inverters connected between positive and negative terminals of a DC power supply

Hierarchical data display

Methods for stimulating a dorsal root ganglion

Handheld electronic device and button input device for use with handheld electronic device

Coherent beam combining using real time holography

Method for solidifying and stabilizing waste acid

Modified gherlin peptides

Power seat track drive assembly

Gardening shears having energy-saving function

System and method for producing a flexible geographical grid

Communication device

Method and system for selective bitmap edge smoothing