发明名称 Semiconductor integrated circuit
摘要 A pin layout which prevents degradation of a frequency characteristic of a low noise amplifier (121, 123) and a receiving mixer (118, 119) included in a semiconductor integrated circuit for the dual-band transmission/reception wherein the circuit of the low noise amplifier is provided in a position where a distance from the end of the pin outside the package of the low noise amplifier to the pad is the shortest; ground pins (104, 106, 108) of two low noise amplifiers and the high frequency signal pins are arranged respectively so as not to be adjacent to each other; the power source and ground pin of the low noise amplifier, and the power source and ground pin of the bias circuit are respectively separated; and high frequency signal wires do not intersect to each other. <IMAGE>
申请公布号 EP1045442(A2) 申请公布日期 2000.10.18
申请号 EP20000107931 申请日期 2000.04.14
申请人 HITACHI, LTD. 发明人 TAKIKAWA, KUMIKO;TANAKA, SATOSHI;HASHIMOTO, TAKASHI;OKABE, YOSHIYUKI
分类号 H01L27/04;H01L21/82;H01L21/822;H01L23/50;H01L23/66;H03F3/187;H04B1/38 主分类号 H01L27/04
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