发明名称 |
Semiconductor integrated circuit |
摘要 |
A pin layout which prevents degradation of a frequency characteristic of a low noise amplifier (121, 123) and a receiving mixer (118, 119) included in a semiconductor integrated circuit for the dual-band transmission/reception wherein the circuit of the low noise amplifier is provided in a position where a distance from the end of the pin outside the package of the low noise amplifier to the pad is the shortest; ground pins (104, 106, 108) of two low noise amplifiers and the high frequency signal pins are arranged respectively so as not to be adjacent to each other; the power source and ground pin of the low noise amplifier, and the power source and ground pin of the bias circuit are respectively separated; and high frequency signal wires do not intersect to each other. <IMAGE> |
申请公布号 |
EP1045442(A2) |
申请公布日期 |
2000.10.18 |
申请号 |
EP20000107931 |
申请日期 |
2000.04.14 |
申请人 |
HITACHI, LTD. |
发明人 |
TAKIKAWA, KUMIKO;TANAKA, SATOSHI;HASHIMOTO, TAKASHI;OKABE, YOSHIYUKI |
分类号 |
H01L27/04;H01L21/82;H01L21/822;H01L23/50;H01L23/66;H03F3/187;H04B1/38 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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