发明名称 |
Method for reforming undercoating surface and method for production of semiconductor device |
摘要 |
This invention is directed to a method for the reform of an undercoating surface prior to the formation of a prospective film by the CVD technique using a reaction gas containing an ozone-containing gas having ozone contained in oxygen and TEOS. This method comprises the steps of forming an undercoating insulating film on a substrate by the use of a mixed gas consisting of an ozone-containing gas having ozone contained in oxygen in a concentration of not less than 4% and a first silicon-containing gas, and reforming the surface of said undercoating insulating film by exposing said surface to a second silicon-containing gas.
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申请公布号 |
US6133160(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19980095751 |
申请日期 |
1998.06.11 |
申请人 |
SEMICONDUCTOR PROCESS LABORATORY CO., LTD. |
发明人 |
KOMIYAMA, HIROSHI;TSUKAMOTO, KOUJI |
分类号 |
H01L21/316;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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