发明名称 |
High-frequency power amplifier and mobile communication device using same |
摘要 |
A MESFET of a GaAs semiconductor device having a p-pocket LDD structure is used for a high-frequency power amplifier of a mobile communication device, in order to decrease current consumption and to increase the continuous operating time of a battery. The high-frequency power amplifier is provided with a gate-bias adjusting feedback element between the drain and gate of the MESFET. Thus, even if there is a great difference between the filled and terminated potentials of the discharge voltage of the battery for supplying electric power to the amplifier, electric power can be supplied near the terminated potential for a long time, so that the mobile communication device can be continuously used for a long time.
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申请公布号 |
US6134424(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19970943160 |
申请日期 |
1997.10.03 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
NISHIHORI, KAZUYA;KITAURA, YOSHIAKI;MORIZUKA, MAYUMI;KAMEYAMA, ATSUSHI;NAGAOKA, MASAMI;WAKIMOTO, HIROTSUGU;SASAKI, TADAHIRO |
分类号 |
H03F3/60;H01L29/08;H01Q1/24;H01Q11/12;H01Q23/00;H03F1/30;H03F3/193;H04B1/04;H04B7/26;(IPC1-7):H01Q11/12;H01L31/112 |
主分类号 |
H03F3/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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