发明名称 |
Method of manufacturing interconnect |
摘要 |
The invention provides a method of manufacturing a metal interconnect. A substrate having a metal line formed thereon is provided. An anti-reflection layer is formed on the metal line. A dielectric layer with a relatively low dielectric constant is formed over the substrate. A patterned photoresist layer is formed on the dielectric layer. The patterned photoresist layer has an opening exposing a portion of the dielectric layer. The portion of the dielectric layer exposed by the opening is removed to form a via hole. The patterned photoresist layer is removed by an O2-H2O-CF4 plasma. The pressure of the O2-H2O-CF4 plasma is about 800-1000 torr. A cleaning process is performed by a post-stripper rinse solution and de-ionized water without using an acetone solution. A barrier layer is formed over the substrate by chemical vapor deposition. A metal nucleation is performed for a long time by chemical vapor deposition to form metal nuclei on the barrier layer. A metal layer is formed to fill the via hole by chemical vapor deposition.
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申请公布号 |
US6133143(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19990340928 |
申请日期 |
1999.06.28 |
申请人 |
UNITED SEMICONDUCTOR CORP.;UNITED MICROELECTRONICS CORP. |
发明人 |
LIN, JY-HWANG;HSIEH, CHING-HSING;HO, YUEH-FENG;YU, CHIA-CHIEH |
分类号 |
H01L21/311;H01L21/60;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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