发明名称 Method of fabricating focusing and color-filtering structure for semiconductor light-sensitive device
摘要 An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC camera to convert photographed image directly into digital form. The focusing and color-filtering structure is used for the focusing and color-filtering of the light incident thereon prior to the light being detected by the light-sensitive device. The focusing and color-filtering structure is characterized in the forming of a dummy pattern layer in the non-filter area surrounding the array of color-filter layers, which allows the subsequently formed planarization layer to be highly planarization with a substantially uniformly flat top surface without having slopes such that the subsequently formed microlenses can all be disposed upright in position without being slanted. The focusing and color-filtering structure has the benefit of allowing the quality of the photographed image to be more assured without being degraded by the ambient scatting light as in the prior art.
申请公布号 US6133062(A) 申请公布日期 2000.10.17
申请号 US19980138759 申请日期 1998.08.24
申请人 UNITED MICROELECTRONICS CORP. 发明人 PAI, YUAN-CHI;LIN, WEI-CHIANG
分类号 G02B5/20;G02B3/00;G02F1/1335;H01L27/14;H01L27/146;H01L31/052;H01L31/12;(IPC1-7):H01L21/31 主分类号 G02B5/20
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