发明名称 |
Method of fabricating focusing and color-filtering structure for semiconductor light-sensitive device |
摘要 |
An improved focusing and color-filtering structure is provided for use in a semiconductor light-sensitive device, such as CMOS (complementary metal-oxide semiconductor) light-sensitive device, that can be used, for example, on a digital camera or a PC camera to convert photographed image directly into digital form. The focusing and color-filtering structure is used for the focusing and color-filtering of the light incident thereon prior to the light being detected by the light-sensitive device. The focusing and color-filtering structure is characterized in the forming of a dummy pattern layer in the non-filter area surrounding the array of color-filter layers, which allows the subsequently formed planarization layer to be highly planarization with a substantially uniformly flat top surface without having slopes such that the subsequently formed microlenses can all be disposed upright in position without being slanted. The focusing and color-filtering structure has the benefit of allowing the quality of the photographed image to be more assured without being degraded by the ambient scatting light as in the prior art.
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申请公布号 |
US6133062(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19980138759 |
申请日期 |
1998.08.24 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
PAI, YUAN-CHI;LIN, WEI-CHIANG |
分类号 |
G02B5/20;G02B3/00;G02F1/1335;H01L27/14;H01L27/146;H01L31/052;H01L31/12;(IPC1-7):H01L21/31 |
主分类号 |
G02B5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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