| 摘要 |
The present invention, in one embodiment provides for use in a semiconductor device having a metal or dielectric layer located over a substrate material, a method of forming an anti-reflective layer on the metal layer and a semiconductor device produced by that method. The method comprises the steps of forming a dielectric layer, such as an amorphous silicon, of a predetermined thickness on the metal layer or dielectric and forming a gradient of refractive indices through at least a portion of the predetermined thickness of the dielectric layer by an oxidation process to transform the dielectric layer into an anti-reflective layer having a radiation absorption region and a radiation transmission region. In advantageous embodiments, the dielectric layer may be a substantially amorphous, non-stacked silicon layer. Additionally, the thickness of the dielectric layer may range from about 4.5 nm to about 150 nm. Moreover, in other embodiments, the method may include the step of doping the dielectric layer with a dopant, such as Boron. In one aspect of this particular embodiment, the dopant may comprise from about 0.5% to about 1.0% by weight of the dielectric layer.
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