| 发明名称 |
Method for manufacturing a DRAM cell capacitor |
| 摘要 |
A method of manufacturing a DRAM cell capacitor is provided wherein a capacitor storage electrode is covered with an HSG (Hemi-Spherical Grain) silicon layer to increase capacitance, but the HSG silicon layer is not formed on the top edge of the capacitor storage electrode.
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| 申请公布号 |
US6133109(A) |
申请公布日期 |
2000.10.17 |
| 申请号 |
US19980221605 |
申请日期 |
1998.12.29 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NAM, SEOK-WOO |
| 分类号 |
H01L21/02;H01L21/20;H01L21/8242;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
| 代理机构 |
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