| 摘要 |
Disclosed is an optical semiconductor device which has: an optical waveguide where a multilayer structure including an active layer is selectively grown like a stripe with both side facets provided with a specific crystalline surface; and a semiconductor current blocking structure which is formed in contact with the side facets of the optical waveguide, the optical waveguide and the semiconductor current blocking structure being formed on a main plane of a first conductivity-type semiconductor substrate; wherein the semiconductor current blocking structure comprises a bottom surface which is selectively formed to contact only the main plane near the optical waveguide.
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