发明名称 |
Photo mask and exposure method using the same |
摘要 |
A photo mask for a lithography process enables the formation of high contrast image and facilitates manufacturing. The photo mask includes a transparent portion for an illumination light and a half-transparent part having a predetermined transmittance for the illumination light. These transparent and half-transparent portions are so constructed that a phase of a transmitted light beam from the half-transparent portion has a phase difference of 2 n pi or (2 n+1) pi radian relative to a light beam passed through a transparent portion. Another type of photo mask includes transparent portion for the illumination light and a light shielding portion against the illumination light. At least a part of the shielding portion has a multilayer construction. An edge at least portion of the shielding portion has a different transmittance for the illumination light then a central portion surrounded by the edge portion.
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申请公布号 |
US6132908(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19970978014 |
申请日期 |
1997.11.25 |
申请人 |
NIKON CORPORATION |
发明人 |
SHIRAISHI, NAOMASA;MAGOME, NOBUTAKA;HIRUKAWA, SHIGERU |
分类号 |
G03F1/00;G03F7/20;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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