Channel design to reduce impact ionization in heterostructure field-effect transistors

摘要

Heterostructure field-effect transistors (HFETs) and other electronic devices are fabricated from a series of semiconductor layers to have reduced impact ionization. On to a first barrier layer there is added a unique second subchannel layer having high quality transport properties for reducing impact ionization. A third barrier layer having a controlled thickness to permit electrons to tunnel through the layer to the subchannel layer is added as a spacer for the fourth main channel layer. A fifth multilayer composite barrier layer is added which has at least a barrier layer in contact with the fourth channel layer and on top a sixth cap layer is applied. The device is completed by adding two ohmic contacts in a spaced apart relationship on the sixth cap layer with a Schottky gate between them which is formed in contact with the fifth barrier layer. The second subchannel layer and the fourth main channel layers are made of materials which have the proper respective energy gaps and ground state energies such that during use the transfer of hot electrons from the main channel into the subchannel is made probable to reduce impact ionization in the main channel. In the preferred AlSb/InAs-based HFETs, the use of an Is InAs subchannel layer under the main InAs channel improves the performance of the HEMTs particularly for gate lengths in the deep-submicron regime. The devices exhibit higher transconductance, lower output conductance, reduced gate leakage current, higher operating drain voltage, and improved frequency performance.