发明名称 FORMATION OF THIN FILM AND PRODUCTION OF LIQUID CRYSTAL DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method for forming a thin film in which the generation of an abnormal discharge between a substrate and a tray for carrying is suppressed, and the generation of a cracking on the substrate can be prevented. SOLUTION: A substrate 100 is held by a tray 200 for carrying, and an insulating film 110 and a 1st metallic film 120 are formed by sputtering. In a state in which the tray 200 for carrying is removed, the 1st metallic film 120 is subjected to patterning. At the time of the patterning, a mask pattern is set in such a manner that the edge part of the 1st metallic film 120 retreats by prescribed dimensions from the part held by a cramp 210 on the peripheral part of the substrate 100. Next, the tray 200 for carrying is again held to the substrate 100, and the 2nd metallic film 140 is formed by sputtering. In this way, the generation of an abnormal discharge between the substrate 100 and the cramp 210 of the tray 200 for carrying can be suppressed.</p>
申请公布号 JP2000290784(A) 申请公布日期 2000.10.17
申请号 JP19990099038 申请日期 1999.04.06
申请人 SEIKO EPSON CORP 发明人 NAONO HIDEAKI;YAMAGUCHI YOSHIO;DAIKOU TETSUYA;TANAKA KAZUHIRO;KOBAYASHI MASAKI
分类号 G09F9/30;C23C14/02;C23C28/00;G02F1/136;G02F1/1365;G09F9/00;(IPC1-7):C23C28/00 主分类号 G09F9/30
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