Apparatuses for desposition or etching

摘要

The apparatus according to the present invention is capable of maintain a plasma at relatively high pressure while preventing a window from being heated or sputtered by the plasma. The reaction chamber includes (1) an entrance window for guiding an electromagnetic wave such as a microwave or an RF to the reaction chamber, (2) a reaction room where film formation or etching for a substrate is performed by exciting a gas with the electromagnetic wave such as the microwave or the RF, and (3) an intermediate room arranged between the reaction room and the entrance window and having a pressure higher than that in the reaction chamber. The gas in the intermediate room is not excited with the electromagnetic wave such as the microwave or the RF.