| 摘要 |
The present invention relates to a new monomer of a lithocholylacrylate type, a new photoresist copolymer prepared from the new monomer, a new photoresist composition and processes for preparing same. The photoresist of the present invention may be used in lithography processes using KrF(248 nm) or ArF(193 nm) light sources which are typically used in the manufacture of 1G or 4G DRAM semi-conductor integrated circuits. The new monomer of the present invention is represented by following Formula II: wherein, R1 represents hydrogen, a substituted or non-substituted C1-C10 straight or branched chain alkyl group, a cycloalkyl group, an alkoxyalkyl group, or a cycloalkoxyalkyl group; and R2 represents hydrogen or a methyl group. A representative new photoresist copolymer of the present invention is represented by the following Formula VII: wherein, R1 and R2 independently represent hydrogen or a methyl group, and x and y independently represent a mole fraction between 0.05 and 0.9.
|
