发明名称 |
Compound semiconductor device |
摘要 |
A compound semiconductor device having a mesa type heterojunction bipolar transistor comprises a collector layer of first conductivity type having a collector breakdown voltage of a predetermined magnitude, a base layer of second conductivity type formed on the collector layer, an emitter layer of first conductivity type formed on the base layer, and a subcollector layer of first conductivity formed in a region remote laterally from an edge of the base layer to be connected to the collector layer.
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申请公布号 |
US6133594(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19980128532 |
申请日期 |
1998.08.04 |
申请人 |
FUJITSU LIMITED |
发明人 |
IWAI, TAISUKE;TANAKA, SHUICHI |
分类号 |
H01L29/73;H01L21/331;H01L29/08;H01L29/205;H01L29/737;(IPC1-7):H01L29/737 |
主分类号 |
H01L29/73 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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