发明名称 |
Method and apparatus for achieving etch rate uniformity in a reactive ion etcher |
摘要 |
A method and apparatus for achieving etch rate uniformity in a reactive ion etcher. The reactive ion etcher generates a plasma within a vacuum chamber for etching a substrate disposed at a cathode of a reactor can within the chamber wherein the plasma emanates from a top plate of the reactor can, and is influenced by localized magnetic fields for locally controlling etch rates across the cathode to produce a uniform etch rate distribution across the cathode as a result of the localized magnetic field. The magnet array may be disposed between the top plate and the vacuum chamber for providing the localized magnetic fields. The magnet array includes a plurality of individual magnets and a grid plate for holding the individual magnets in position.
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申请公布号 |
US6132632(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19970927186 |
申请日期 |
1997.09.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HANEY, DAVID EMERY;HUBER, ROBERT JAMES;HWANG, CHERNGYE;PEREZ, DIANA;WILLIAMS, JOHN WESLEY |
分类号 |
H01J37/32;(IPC1-7):C23C16/00;B44C1/22 |
主分类号 |
H01J37/32 |
代理机构 |
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代理人 |
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