| 发明名称 |
Compound semiconductor device and method for producing the same |
| 摘要 |
A compound semiconductor device includes a contact structure having a plurality of layers provided on a compound semiconductor layer and an electrode provided on the contact structure. The contact structure includes a first contact layer made of InxGa1-xAs (0.9</=x</=1) on the side closest to the electrode.
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| 申请公布号 |
US6133592(A) |
申请公布日期 |
2000.10.17 |
| 申请号 |
US19970802126 |
申请日期 |
1997.02.19 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
KISHIMOTO, KATSUHIKO;TWYNAM, JOHN KEVIN;TAKAHASHI, NAOKI |
| 分类号 |
H01L29/15;H01L29/737;(IPC1-7):H01L29/78;H01L33/00 |
主分类号 |
H01L29/15 |
| 代理机构 |
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| 主权项 |
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