发明名称 |
Method for curing spin-on-glass film utilizing electron beam radiation |
摘要 |
An electron beam exposure method is described which provides a means of curing spin-on-glass formed on a semiconductor wafer which insulates the conductive metal layer and planarizes the topography in the process of manufacturing multilayered integrated circuits. The method utilizes a large area, uniform electron beam exposure system in a soft vacuum environment. A wafer coated with uncured siloxane spin-on-glass is irradiated with electrons of sufficient energy to penetrate the entire thickness of the spin-on-glass and is simultaneously heated by infrared heaters. The wafer is exposed to a predetermined dose of electrons while simultaneously raised to a peak temperature in a soft vacuum environment. The electron beam and infrared heaters are then extinguished and the substrate cooled before removing from vacuum.
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申请公布号 |
US6132814(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19970856888 |
申请日期 |
1997.05.14 |
申请人 |
ELECTRON VISION CORPORATION |
发明人 |
LIVESAY, WILLIAM R.;ROSS, MATTHEW F.;RUBIALES, ANTHONY L. |
分类号 |
H01L21/31;H01L21/027;H01L21/3105;H01L21/312;H01L21/316;(IPC1-7):B29C71/02 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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