Multiple substrate processing apparatus for enhanced throughput

摘要

A dual wafer processing apparatus (4) includes a chamber housing (14) defining an interior and having upper, lower and central portions (18, 20, 16). An electrostatic chuck (34) has electrostatic chucking surfaces (38, 40) on opposite sides. The chuck is rotatably mounted within the chamber housing so that the chucking surfaces face the upper and lower portions of the chamber housing. After a wafer (36) is positioned on a chucking surface, electrostatic forces are used to maintain the wafer secured to the chucking surface. The chuck is then rotated 180 DEG to permit placement of a second wafer on the second chucking surface. Processing of the two wafers occurs simultaneously. Electrostatic chucking surfaces could be replaced by mechanical wafer clamps.