发明名称 Multi-state flash memory defect management
摘要 A system is described which stores data intended for defective memory cells in a row of a memory array in an overhead location of the memory row. The data is stored in the overhead packet during a write operation, and is read from the overhead packet during a read operation. A defect location table for the row of the memory array is provided to identify when a defective memory cell is addressed for either a read or write access operation. During a write operation, the correct data is stripped from incoming data for storing into the overhead packet. During a read operation, the correct data is inserted into an output data stream from the overhead packet. Data written to defective cells can be either a custom setting, a default setting, or the original data. Shift registers are described for holding good data during either a read or write operation. The number of shift registers used is determined by the number of states stored in a memory cell. The shift registers use a marker for alignment of data bits in a data stream.
申请公布号 US6134143(A) 申请公布日期 2000.10.17
申请号 US19990443661 申请日期 1999.11.19
申请人 MICRON TECHNOLOGY, INC. 发明人 NORMAN, ROBERT D.
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
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