发明名称 |
Field emission displays with reduced light leakage |
摘要 |
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000 DEG C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
|
申请公布号 |
US6133056(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19990256882 |
申请日期 |
1999.02.24 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CATHEY, JR., DAVID A.;LEE, JOHN K.;ZHANG, TIANHONG;MORADI, BEHNAM |
分类号 |
H01J1/05;H01J9/02;H01L21/00;H01L21/4763;H01L29/06;(IPC1-7):H01L21/00 |
主分类号 |
H01J1/05 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|