发明名称 |
Fabrication of a planar MOSFET with raised source/drain by chemical mechanical polishing and nitride replacement |
摘要 |
A method of fabricating a MOSFET includes: depositing an oxide layer on the planarized substrate; forming a silicon nitride island above a gate region in the substrate; building an oxide sidewall about the nitride island; forming a source region and a drain region in the substrate; removing the silicon nitride island, thereby leaving a void over the gate region; forming a gate dielectric over the gate region in the void; filling the void and the areas over the source region and drain region; planarizing the upper surface of the structure by chemical mechanical polishing; depositing a metal layer on the upper surface of the structure; and metallizing the structure to form electrodes in electrical contact with the source region, the gate region, and the drain region.
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申请公布号 |
US6133106(A) |
申请公布日期 |
2000.10.17 |
申请号 |
US19980028157 |
申请日期 |
1998.02.23 |
申请人 |
SHARP LABORATORIES OF AMERICA, INC.;SHARP KABUSHIKI KAISHA |
发明人 |
EVANS, DAVID RUSSELL;HSU, SHENG TENG |
分类号 |
H01L29/78;H01L21/28;H01L21/3105;H01L21/336;H01L21/768;H01L29/417;H01L29/49;H01L29/51;H01L29/786;(IPC1-7):H01L21/336;H01L21/320;H01L21/476 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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