发明名称 SPIN-ON GLASS PROCESSING TECHNIQUE FOR THE FABRICATION OF SEMICONDUCTOR DEVICE
摘要 A method of applying a spin-on glass layer to a substrate is disclosed wherein the spin-on glass is applied as a plurality of contiguous thin layers that together form a composite layer. Each thin layer is cured prior to the application of the next layer at a temperature of at least about 300.degree.C, preferably 350.degree.C, for a time sufficient to permit catalyst connection and substantially eliminate volatile residual solvents contained therein. In this way cracking in organic SOGs can be substantially eliminated, and beneficial results can also be achieved with quasi-organic SOGs.
申请公布号 CA2009518(C) 申请公布日期 2000.10.17
申请号 CA19902009518 申请日期 1990.02.07
申请人 OUELLET, LUC 发明人 OUELLET, LUC
分类号 B05D7/24;G03F7/16;H01L21/027;H01L21/3105;H01L21/312;H01L21/316;H01L21/768;H01L23/29;(IPC1-7):H01L21/31;H01L21/56 主分类号 B05D7/24
代理机构 代理人
主权项
地址