发明名称 Thin film transistor and method of fabricating the same
摘要 A thin film transistor (TFT) which may be used as a pixel drive element in an active matrix LCD display includes a pair of side wall spacers adjacent to the opposing side walls of its gate electrode. The side wall spacers provide the gate electrode with a substantially rectangular cross section, such that the gate electrode has a substantially constant thermal conductivity over its area. The TFT has a uniform device characteristic.
申请公布号 US6133074(A) 申请公布日期 2000.10.17
申请号 US19980114813 申请日期 1998.07.13
申请人 SANYO ELECTRIC CO., LTD.;SONY CORP. 发明人 ISHIDA, SATOSHI;NAKAHARA, YASUO;KURIYAMA, HIROYUKI;YAMADA, TSUTOMU;YONEDA, KIYOSHI;SHIMOGAICHI, YASUSHI
分类号 G02F1/136;G02F1/1362;G02F1/1368;G09F9/30;H01L21/20;H01L21/268;H01L21/316;H01L21/336;H01L27/12;H01L29/423;H01L29/786;(IPC1-7):H01L21/00 主分类号 G02F1/136
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