Method of forming a film by using plasmanized process gas containing gaseous H2O and an auxiliary gas in a semiconductor device

摘要

There is provided a film forming pre-treatment method used when silicon containing insulating film, etc. are to be formed by virtue of thermal CVD method on a substrate 101 on which interconnection layers, etc. are formed. Before an insulating film is deposited on the substrate 101, gaseous H2O is plasmanized and then a surface of the substrate 101 is exposed to such plasmanized H2O.