Method and apparatus for treating exhaust gas from a semiconductor fabrication machine

摘要

A method and apparatus for treating exhaust gas from a semiconductor fabrication machine by utilizing a dual-stage apparatus are disclosed. The dual-stage apparatus utilizes a first stage treatment of a condensation unit for removing high boiling temperature contents in the exhaust gas and a second stage treatment in fluid communication with the first stage treatment of an absorption unit for removing low boiling temperature contents in the exhaust gas or contents that were not previously removed in the first stage treatment. The condensation unit can be operated efficiently at a temperature range between about 5 DEG C. and about 15 DEG C., while the partially-treated exhaust gas exiting the condensation unit can be pre-heated to a temperature between about 20 DEG C. and about 40 DEG C. prior to entering the absorption unit for removal of the low boiling temperature contents.