| 摘要 |
PURPOSE: A method for fabricating a semiconductor device is provided to improve a turn-off characteristics of a MOS transistor by preventing the generation of a row threshold voltage region in a MOS channel. CONSTITUTION: After forming the first oxide on a P-type semiconductor substrate(31) with a thermal oxidation process, a poly silicon and the first photo resist(34) formed on the first oxide sequentially. A gate oxide(32) and a gate electrode(33) are formed by etching the poly silicon and the first oxide selectively using the first photo resist as a mask. By performing a low dense N-type impurity ion implantation process and a drive-in diffusion after removing the first photo resist, the first impurity region(35) is formed in the surface of the substrate on both sides of the gate electrode. Then, an oxide is formed on the whole surface including the gate electrode, and an oxide side wall(36) is formed on both sides of the gate electrode by etching back the oxide. And, the second impurity region(37) is formed in the substrate on both sides of the gate electrode by performing a high dense N-type impurity ion implantation process and a drive-in diffusion. An LDD source/drain impurity region is formed with the first and the second impurity region. And, the first amorphization region acting as a channel stopping film is formed in the gate electrode and the first impurity region surface by injecting a heavy ion like an As ion. And, the second amorphization region(40) is formed below the first amorphization region. Then, a metal layer is formed on the whole surface, and a silicide layer(41) is formed on the surface of the gate electrode and the source/drain impurity region by annealing.
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