METHOD FOR MANUFACTURING METAL OXIDE SEMICONDUCTOR TRANSISTOR

摘要

PURPOSE: A method for manufacturing a metal oxide semiconductor(MOS) transistor is provided to increase an integration degree and to reduce a parasitic current by forming a shallow trench in a simple process. CONSTITUTION: A method for manufacturing a metal oxide semiconductor(MOS) transistor comprises the steps of: sequentially evaporating a gate oxidation layer and a polysilicon layer on a semiconductor substrate(11) having a device region or on a well, forming a gate electrode(13) by a photolithography process; forming a source/drain region in the semiconductor substrate or in the device region of the well by using the gate electrode as a mask; forming an oxidation layer on the semiconductor substrate having the gate electrode and the source/drain region or on the well; eliminating the oxidation layer excluding only the oxidation layer on the sidewall of the gate electrode; and performing a selective epitaxial process on the device region to grow a silicon epitaxial layer on the gate electrode and source/drain region.