| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve stability and yield and to reduce a spacing between nodes in terms of a design rule, without using a hemispherical silicon grain(HSG) process. CONSTITUTION: A first insulating layer and a second insulating layer are formed on a semiconductor device(116). A first contact hole is formed in the first and second insulating layers. And, a plug(119) of a doped first polycrystalline silicon layer is formed in the contact hole. Pluralities of silicon oxidation layers are formed on the substrate. Then, a second contact hole of a plurality of dints is formed on the plurality of silicon oxidation layers. Also, A doped second polycrystalline silicon layer is formed on a sidewall and a lower surface of the second contact hole. Lastly, the pluralities of silicon layers are eliminated to form a node capacitor of a dint type on an outer surface with the second polycrystalline silicon layer.
|
