| 摘要 |
PURPOSE: A method for manufacturing a TFT is provided to improve On/Off characteristic by increasing driving current. CONSTITUTION: The method includes three processes. The first process is to form a gate(33) having a predetermined width in a predetermined part on a substrate(31) and having a trench formed in the direction of the length of a channel in the central part. The second process is to sequentially form a gate insulating film(37) and an active layer(39) on the gate. The third process is to form an impurity region(41), which is used as source and drain regions, by implanting an impurity to both sides in the length direction of the active layer. The process for forming the gate includes a step of depositing a polysilicon, in which an impurity is doped, on the substrate and patterning in the length direction of a channel and a step of forming a trench exposing the central part of the polysilicon remaining after the patterning by etching in a predetermined deep.
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