MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a metal interconnection line of a semiconductor device is provided to reduce a chip size by removing a misalign margin, and to improve the reliability and the yield of the device by preventing a conductive region or an interconnection line on a lower part from being revealed or etched. CONSTITUTION: Metal interconnection lines(51) are buried in the first openings(45) and formed long. Also, the metal interconnection lines are contacted with junction parts(33) through the second openings(47) and thus are connected with other junction parts or other interconnection lines electrically. Both ends of the second openings in a width direction meet the first openings, and both ends in a length direction are narrower than the junction parts and thus are included in the first openings.