| 摘要 |
<p>PURPOSE: A semiconductor device having a dummy pattern around a pad is provided to not only improve the flatness between a real pattern and a pad, but also prevent the short between pads, caused by a bridge between a pad and a dummy pattern. CONSTITUTION: To solve the short caused by a bridge between a first dummy pattern (25) and a pad (23), a second dummy pattern (27) electrically insulated by a first and a second grove patterns (29, 31) is formed around a pad (23). Therefore, even though the short caused by a bridge between the pad (23) and the second dummy pattern (27) occurs, the short does not have influence on a semiconductor during an electrical test for the semiconductor due to the reason the first dummy pattern (25) is isolated from the pad (23) by the second groove pattern (31). Consequently, the first and the second dummy patterns (25,27) formed between a real pattern (21) and the pad (23) result in improvement of the flatness, and the short caused by the bridge is prevented as well by the insulation of a space between the first dummy pattern (25) and the pad (23).</p> |
