| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a fabrication method thereof are provided to prevent the increase of resistance between a plug and a lower electrode. CONSTITUTION: An insulating layer(35) is formed on a semiconductor substrate(31), and a doped region(33) formed near a surface of the substrate(31) is exposed through a contact hole in the interlayer dielectric(35). After a plug(39) is formed in the contact hole, an adhesive layer(41), a first barrier metal(43) and a first lower electrode(45) are successively formed on the insulating layer(35) and removed from peripheries of the plug(39). Also, the insulating layer(35) is then overetched, and sides of the adhesive layer(41) are nitrified to form a second barrier metal(47). A second lower electrode(48) is next formed on sides of the overetched insulating layer(35) and the first and second barrier metals(43,47). Then, a dielectric layer(49) is formed covering the first and second lower electrodes(45,48), and an upper electrode(51) is formed on the dielectric layer(49).
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