发明名称 SENSE AMP CONTROL CIRCUIT MEMORY
摘要 PURPOSE: A sense amp control circuit of a memory is provided to prevent the mis-operation of a sense amp by delaying a sense amp enable signal applied to the sense amp according to a level of a power voltage. CONSTITUTION: A sense amp control circuit of a memory controls a sense amp(20) sensing and amplifying data and data bar from one cell according as an operation voltage of the memory is widened. The sense amp control circuit improves the reliability and the stability of the whole circuit by preventing the mis-operation of the sense amp, by outputting a sense amp enable signal to the sense amp after delaying the sense amp enable signal using a delay portion in case that a high power voltage is applied. The control circuit comprises: a sense amp control portion(10) inputting a plurality of address transition signals generated by a control signal inputted from the external and outputting the sense amp control signal; an enable control portion(100) outputting the sense amp enable signal without delay in case that the power voltage is a low power voltage, and outputting after delaying the sense amp enable signal in case of a high power voltage; and the sense amp outputting the difference of data and data bar inputted by the enable control signal of the enable control portion as a data output signal.
申请公布号 KR20000060213(A) 申请公布日期 2000.10.16
申请号 KR19990008344 申请日期 1999.03.12
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 KIM, SEUNG BONG
分类号 G11C7/06;(IPC1-7):G11C7/06 主分类号 G11C7/06
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