Avalanche injection eeprom memory cell with p-type control gate,申请号AU20000039041-传众专利搜索

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发明名称	Avalanche injection eeprom memory cell with p-type control gate
摘要
申请公布号	AU3904100(A)	申请公布日期	2000.10.16
申请号	AU20000039041	申请日期	2000.03.20
申请人	LATTICE SEMICONDUCTOR CORPORATION	发明人	XIAO-YU LI;STEVEN J. FONG;SUNIL D. MEHTA
分类号	H01L21/8247;H01L27/115	主分类号	H01L21/8247
代理机构		代理人
主权项
地址

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