发明名称 SMART POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A smart power device is provided to secure a broad safe operation area(SOA) and to improve a current driving characteristic, by reducing ionization impact on a drain region. CONSTITUTION: A smart power device comprises a drift region(33) of a second conductivity type, a source region(36)/a body contact region(38), a dwell region(34) of a first conductivity type, a drain region(37), a gate electrode layer(35), a field plate(39) and source/drain electrode layers(41,40). The drift region of the second conductivity type is formed in a well region(31) of the first conductivity type by first, second and third ion injections having first, second and third ion injection energy with first, second and third dose, respectively. The source region and body contact region are formed in the drift region of the second conductivity type. The dwell region of the first conductivity type is formed near the drift region of the second conductivity type. The drain region is formed in the dwell region of the first conductivity type. The gate electrode layer is intervened between insulating layers formed on the entire surface. The field plate is formed in a corner of the gate electrode layer and on the drift region of the second conductivity type. The source/drain electrode layers are made contact with source/drain regions, respectively.
申请公布号 KR20000060591(A) 申请公布日期 2000.10.16
申请号 KR19990009016 申请日期 1999.03.17
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 BAEK, JONG HAK
分类号 H01L21/331;H01L21/336;H01L29/06;H01L29/08;H01L29/40;H01L29/78 主分类号 H01L21/331
代理机构 代理人
主权项
地址